Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

被引：49

作者：

Yu, ZN ^{[1
]}

Schablitsky, SJ ^{[1
]}

Chou, SY ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Nanostruct Lab, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs metal-semiconductor-metal photodetectors (MSM PDs) with a variety of nanoscale finger spacings and widths were fabricated using nanoimprint lithography (NIL). Compared with MSM-PDs fabricated using electron-beam lithography and photolithography, the MSM-PDs fabricated using NIL do not show observable degradation in the device characteristics if the imprinting pressures are kept at 600 psi or below, although they do degrade at higher pressures. (C) 1999 American Institute of Physics. [S0003-6951(99)01616-2].

引用

页码：2381 / 2383

页数：3

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