THE USE OF SCHOTTKY-BARRIER DIODES FOR THE DETECTION OF SURFACE CONTAMINATION AND DAMAGE IN THE FABRICATION OF GAAS-MESFETS

被引：2

作者：

ALLAN, DA

SMITH, PJ

BOWIE, JA

机构：

[1] British Telecommunications Research, Lab, Ipswich, Engl, British Telecommunications Research Lab, Ipswich, Engl

来源：

关键词：

D O I：

10.1016/0042-207X(85)90313-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SEMICONDUCTOR DIODES

引用

页码：543 / 546

页数：4

共 6 条

BLAKERS, AW ;

GREEN, MA ;

SZPITALAK, T .

[2]

LANG DV, 1979, TOPICS APPLIED PHYSI, V37, P100

LEIGH, PA .

[4] EVIDENCE FOR THE CREATION OF THE MAIN ELECTRON TRAP IN BULK GAAS [J].

MARTIN, GM ;

TERRIAC, P ;

MAKRAMEBEID, S ;

GUILLOT, G ;

GAVAND, M .

[5]

Rhoderick E. H., 1978, METAL SEMICONDUCTOR, P46

SMITH, PJ ;

ALLAN, DA .