THE EFFECTS OF PLASMA AND ION-BEAM PROCESSING ON THE PROPERTIES OF N-GAAS SCHOTTKY DIODES

[1] ANNEALING OF ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &

[2] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909

[3] ION-BEAM DAMAGE EFFECTS DURING THE LOW-ENERGY CLEANING OF GAAS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 48 - 50

[4] HARPER SME, 1982, J VAC SCI TECH, V21, P737

[5] ION-CLEANING DAMAGE IN(100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1983, 26 (02) : 125 - 129

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[7] LANG DV, 1979, TOPICS APPLIED PHYSI, V37, P100

[8] LEDERMAN A, 1981, SOLID STATE TECHNOL, V24, P123

[9] EVIDENCE FOR THE CREATION OF THE MAIN ELECTRON TRAP IN BULK GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 61 - 63

[10] MEISSEL LI, 1970, HDB THIN FILM TECHNO, P3

[1] ANNEALING OF ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &

[2] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909

[3] ION-BEAM DAMAGE EFFECTS DURING THE LOW-ENERGY CLEANING OF GAAS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 48 - 50

[4] HARPER SME, 1982, J VAC SCI TECH, V21, P737

[5] ION-CLEANING DAMAGE IN(100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1983, 26 (02) : 125 - 129

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[7] LANG DV, 1979, TOPICS APPLIED PHYSI, V37, P100

[8] LEDERMAN A, 1981, SOLID STATE TECHNOL, V24, P123

[9] EVIDENCE FOR THE CREATION OF THE MAIN ELECTRON TRAP IN BULK GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 61 - 63

[10] MEISSEL LI, 1970, HDB THIN FILM TECHNO, P3