ION-CLEANING DAMAGE IN(100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODES

被引：35

作者：

KWAN, P

BHAT, KN

BORREGO, JM

GHANDHI, SK

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(83)90113-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：125 / 129

页数：5

共 11 条

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MARK, P
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[2] BOLLINGER D, 1980, SOLID STATE TECHNOL, V23, P79
[3] Carter G., 1976, ION IMPLANTATION SEM
[4] GHANDI SK, 1982, IEEE ELECTRON DEV LE, V3, P50
[5] JOHNSON NM, 1976, J VAC SCI TECHNOL, V13
[6] Poate J M, 1978, THIN FILMS INTERDIFF
[7] ROBERTSON DD, 1978, SOLID STATE TECHNOL, V21, P57
[8] COMPOSITION CHANGES IN GAAS DUE TO LOW-ENERGY ION-BOMBARDMENT
SINGER, IL
MURDAY, JS
COOPER, LR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 725 - 725
[9] ION-BEAM TECHNIQUES FOR DEVICE FABRICATION
SPENCER, EG
SCHMIDT, PH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : S52 - &
[10] REVIEW OF ETCHING AND DEFECT CHARACTERIZATION OF GALLIUM-ARSENIDE SUBSTRATE MATERIAL
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STRAUGHAN, BW
[J]. THIN SOLID FILMS, 1976, 31 (1-2) : 139 - 170