INVESTIGATION OF CVD SILICON-NITRIDE ENCAPSULATION FOR GALLIUM-ARSENIDE

被引：6

作者：

LEIGH, PA

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1982年 / 52卷 / 01期

关键词：

D O I：

10.1080/00207218208901393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：23 / 41

页数：19

共 14 条

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[8] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE [J].

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[9] ION PROBE TECHNIQUE FOR STUDY OF GALLIUM DIFFUSION IN SILICON-NITRIDE FILMS [J].

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[10] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS [J].

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