SURFACE DAMAGE CAUSED BY ELECTRON-BEAM METALLIZATION OF HIGH OPEN-CIRCUIT VOLTAGE SOLAR-CELLS

被引：15

作者：

BLAKERS, AW

GREEN, MA

SZPITALAK, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期

关键词：

D O I：

10.1109/EDL.1984.25905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：246 / 247

页数：2

共 14 条

[1] ANNEALING OF RADIATION-INDUCED POSITIVE CHARGE IN MOS DEVICES WITH ALUMINUM AND POLYSILICON GATE CONTACTS [J].

AITKEN, JM .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :639-650

[2] 678-MV OPEN-CIRCUIT VOLTAGE SILICON SOLAR-CELLS [J].

BLAKERS, AW ;

GREEN, MA .

APPLIED PHYSICS LETTERS, 1981, 39 (06) :483-485

[3]

BUCHER E, 1981, COMMUNICATION

[4]

GALLOWAY KF, 1979, SOLID STATE TECHNOL, V22, P96

[5] EFFECTS OF PROCESSING ON RADIATION-DAMAGE IN SIO2 [J].

GDULA, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :644-647

[6] HIGH-TEMPERATURE LIFETESTING OF AL-SIOX-P-SI CONTACTS FOR MIS SOLAR-CELLS [J].

GODFREY, RB ;

GREEN, MA .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :860-861

[7] HIGH-EFFICIENCY SILICON SOLAR-CELLS [J].

GREEN, MA ;

BLAKERS, AW ;

SHI, J ;

KELLER, EM ;

WENHAM, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) :679-683

[8] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

[9]

GREEN MA, 1982, 16TH P IEEE PHOT SPE, P1219

[10]

MUELENBERG A, 1981, COMMUNICATION

← 1 2 →