678-MV OPEN-CIRCUIT VOLTAGE SILICON SOLAR-CELLS

[1] BLAKERS AW, 1981, 5TH INT ION BEAM AN

[2] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[4] IMPORTANCE OF SURFACE RECOMBINATION AND ENERGY-BANDGAP NARROWING IN P-N-JUNCTION SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) : 1294 - 1298

[5] PHYSICS UNDERLYING THE PERFORMANCE OF BACK-SURFACE-FIELD SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 785 - 791

[6] 655-MV OPEN-CIRCUIT VOLTAGE, 17.6-PERCENT EFFICIENT SILICON MIS SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 790 - 793

[7] Green M. A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P684

[8] EFFECTS OF PINHOLES, OXIDE TRAPS, AND SURFACE-STATES ON MIS SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 178 - 180

[9] SURFACE PASSIVATION OF INVERSION LAYER MIS SOLAR-CELLS [J]. ELECTRONICS LETTERS, 1980, 16 (18) : 707 - 708

[10] ELECTROSTATIC EFFECTS IN INVERSION-LAYER METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1087 - 1089

[1] BLAKERS AW, 1981, 5TH INT ION BEAM AN

[2] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[4] IMPORTANCE OF SURFACE RECOMBINATION AND ENERGY-BANDGAP NARROWING IN P-N-JUNCTION SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) : 1294 - 1298

[5] PHYSICS UNDERLYING THE PERFORMANCE OF BACK-SURFACE-FIELD SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 785 - 791

[6] 655-MV OPEN-CIRCUIT VOLTAGE, 17.6-PERCENT EFFICIENT SILICON MIS SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 790 - 793

[7] Green M. A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P684

[8] EFFECTS OF PINHOLES, OXIDE TRAPS, AND SURFACE-STATES ON MIS SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 178 - 180

[9] SURFACE PASSIVATION OF INVERSION LAYER MIS SOLAR-CELLS [J]. ELECTRONICS LETTERS, 1980, 16 (18) : 707 - 708

[10] ELECTROSTATIC EFFECTS IN INVERSION-LAYER METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1087 - 1089