Analysis of AlN thin films by combining TOF-ERDA and NRB techniques

被引：71

作者：

Jokinen, J ^{[1
]}

Haussalo, P ^{[1
]}

Keinonen, J ^{[1
]}

Ritala, M ^{[1
]}

Riihela, D ^{[1
]}

Leskela, M ^{[1
]}

机构：

[1] UNIV HELSINKI,DEPT CHEM,FIN-00014 HELSINKI,FINLAND

来源：

THIN SOLID FILMS | 1996年 / 289卷 / 1-2期

基金：

芬兰科学院;

关键词：

aluminium nitride; depth profiling; nuclear resonance broadening; time-of-flight elastic recoil detection analysis;

D O I：

10.1016/S0040-6090(96)08927-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Light atom impurities in polycrystalline AlN thin films deposited by atomic layer epitaxy on glass substrates have been analysed by combining two high-energy ion beam techniques, namely time-of-flight elastic recoil detection analysis and nuclear resonance broadening techniques. The advantages of their combined use in depth profiling of light elements, H, C, O and Cl impurity traces in the present study, are demonstrated in the framework of optimizing the production of pure AlN thin films from AlCl3 and Al(CH3)(3) aluminium sources.

引用

页码：159 / 165

页数：7

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