Gel formation and the efficiency of anodic film growth on aluminium

被引:97
作者
Morlidge, JR
Skeldon, P
Thompson, GE
Habazaki, H
Shimizu, K
Wood, GC
机构
[1] Univ Manchester, Inst Sci & Technol, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 98077, Japan
[3] Keio Univ, Univ Chem Lab, Yokohama, Kanagawa 223, Japan
基金
英国工程与自然科学研究理事会;
关键词
anodizing; aluminium; anodic films; efficiency; gels;
D O I
10.1016/S0013-4686(98)00363-6
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The development of gel layers during anodizing, and their influence on the efficiency of growth of anodic films, has been examined for formation of films at constant current density on aluminium in saturated potassium antimonate electrolyte and 0.1 M sodium molybdate, sodium silicate and sodium tungstate electrolytes. The gels are produced immediately above the growing anodic films by the reaction of H+ ions, generated at the film/gel interface, with the electrolyte anions to form uniform layers of hydrated oxide. The gels can enhance the efficiency of film growth by reducing, or eliminating, field-assisted ejection of Al3+ ions from the film to the electrolyte. The thicknesses of the gel layers increase at constant rates with thickening of the anodic films, although the efficiencies of gel formation per se are relatively low. The thickest gels are obtained following anodizing in antimonate electrolyte possibly reflecting a more favorable rate of gel formation, relative to its rate of dissolution, than that for other gel layers. The gel layers may shrink and crack on drying, most noticeably for the gels formed in antimonate and tungstate electrolytes. The gel layers formed in molybdate electrolyte appear, by comparison, highly resistant to cracking. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2423 / 2435
页数:13
相关论文
共 24 条
[1]  
[Anonymous], J ELECTROCHEM SOC
[2]   USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J].
BROWN, F ;
MACKINTOSH, WD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1096-1102
[3]   STUDY BY NUCLEAR MICROANALYSIS AND O-18 TRACER TECHNIQUES OF OXYGEN-TRANSPORT PROCESSES AND GROWTH LAWS FOR POROUS ANODIC OXIDE LAYERS ON ALUMINUM [J].
CHERKI, C ;
SIEJKA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) :784-791
[4]  
CROSSLAND AC, IN PRESS EUROCORR 97
[5]   MIGRATION OF METAL AND OXYGEN DURING ANODIC FILM FORMATION [J].
DAVIES, JA ;
DOMEIJ, B ;
PRINGLE, JPS ;
BROWN, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) :675-&
[7]   GEL FORMATION DURING GROWTH OF BARRIER-TYPE ANODIC FILMS ON ALUMINUM [J].
DURANROMERO, R ;
NI, CT ;
SKELDON, P ;
THOMPSON, GE ;
WOOD, GC ;
SHIMIZU, K .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 70 (02) :163-174
[8]   HIGH RESISTANCE ANODIC OXIDE FILMS ON ALUMINIUM [J].
HARKNESS, AC ;
YOUNG, L .
CANADIAN JOURNAL OF CHEMISTRY, 1966, 44 (20) :2409-&
[9]   A MECHANISM FOR THE FORMATION OF POROUS ANODIC OXIDE FILMS ON ALUMINIUM [J].
HOAR, TP ;
MOTT, NF .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) :97-99
[10]  
Pourbaix M., 1974, Natl. Assoc. Corros. Eng, V2nd