Wire-bond failures induced by resonant vibrations in the CDF silicon detector

被引：22

作者：

Bolla, G

Atac, M

Pavlicek, V

Nahn, S

Garcia-Sciveres, M

Mumford, R

Nguyen, T

Forrester, S

Hill, C

Olszewski, J

Rahaman, A

Goldstein, J

Ashmanskas, B

Maruyama, T

Zimmerman, T

Moccia, S

Lewis, J

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA

[3] Yale Univ, New Haven, CT 06520 USA

[4] Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[5] Johns Hopkins Univ, Baltimore, MD 21218 USA

[6] Univ Calif Davis, Davis, CA 95616 USA

[7] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[8] Univ Pittsburgh, Pittsburgh, PA 15260 USA

[9] Rutherford Appleton Lab, CCLRC, Didcot OX11 0QX, Oxon, England

[10] Argonne Natl Lab, Argonne, IL 60439 USA

[11] Univ Chicago, Chicago, IL 60637 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 518卷 / 1-2期

关键词：

CDF; tracker;

D O I：

10.1016/j.nima.2003.10.081

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Unrecoverable internal failures of modules in the CDF Run2 Silicon detector have been observed since its installation in earlv 2001. A fraction of these failures has been categorized as infant mortality. Other failures occurring later were strongly correlated with fixed trigger conditions. These failures are explained by wire-bonds breaking due to fatigue stress induced by resonant vibration. These resonant vibrations are a direct consequence of the oscillating Lorentz forces induced by the 1.4 T magnetic field on wire-bonds carrying non-DC current. Changes have been implemented in data-taking procedures in order to minimize the occurrences of such failures and to prolong the lifetime of the detector itself. A more general analysis of the topic has been pursued. Changes in the packaging and assembly processes for future applications have been investigated. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：277 / 280

页数：4

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