Planar defects in epitaxial DySi2-x thin films on (111)Si

被引：4

作者：

Shen, GH ^{[1
]}

Chen, JC ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

Dy silicide; Dy; stacking faults;

D O I：

10.1016/S0169-4332(98)00649-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A high density of planar defects was found by transmission electron microscopy in DySi2-x thin films. The planar defects were analyzed to be stacking faults of shear type on {0001} planes with 1/6[1 (2) over bar 13] displacement vectors. The density of stacking faults was observed to decrease with annealing temperature and time. The accommodation of misfit between coalescing islands is suggested as the origin for the formation of stacking faults in epitaxial DySi2-x films on (111)Si. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：332 / 335

页数：4

共 7 条

[1] EXTREMELY LOW RESISTIVITY ERBIUM OHMIC CONTACTS TO N-TYPE SILICON [J].

JANEGA, PL ;

MCCAFFREY, J ;

LANDHEER, D .

APPLIED PHYSICS LETTERS, 1989, 55 (14) :1415-1417

[2] EPITAXIAL-GROWTH OF RARE-EARTH SILICIDES ON (111) SI [J].

KNAPP, JA ;

PICRAUX, ST .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :466-468

[3] EVOLUTION OF VACANCY ORDERING AND DEFECT STRUCTURE IN EPITAXIAL YSI2-X THIN-FILMS ON (111)SI [J].

LEE, TL ;

CHEN, LJ ;

CHEN, FR .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) :3307-3312

[4] THE SCHOTTKY-BARRIER HEIGHT OF THE CONTACTS BETWEEN SOME RARE-EARTH-METALS (AND SILICIDES) AND P-TYPE SILICON [J].

NORDE, H ;

DESOUSAPIRES, J ;

DHEURLE, F ;

PESAVENTO, F ;

PETERSSON, S ;

TOVE, PA .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :865-867

[5]

ROGE TP, 1996, SURF SCI, V622, P352

[6]

SHEN GH, IN PRESS J APPL PHYS

[7]

Stowell M.J., 1975, EPITAXIAL GROWTH, P437

← 1 →