Characterizations of undoped and Cu doped CdS thin films using photothermal and other techniques

被引:12
作者
Paulraj, M [1 ]
Ramkumar, S
Varkey, KP
Vijayakumar, KP
Kartha, CS
Nair, KGM
机构
[1] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India
[2] Rajagiri Sch Engn & Technol, Dept Elect, Cochin 680039, Kerala, India
[3] Govt Engg Coll, Dept Phys, Trichur, Kerala, India
[4] Indira Gandhi Ctr Atom Res, PIF, MSL, Kalpakkam 602103, Tamil Nadu, India
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 03期
关键词
D O I
10.1002/pssa.200406918
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photothermal Deflection Spectroscopy (PDS) technique was used to study undoped and copper (Cu) doped cadmium sulphide (CdS) thin films. Variation in grain size and lattice strain due to Cu doping were analysed using X-ray diffraction (XRD). Changes in mobility of carriers in CdS with Cu concentration was studied using PDS technique for the first time and results are compared with the earlier ones. Thickness of Cu diffused region in CdS was also calculated and compared with results from X-Ray Photoelectron Spectroscopy (XPS) and Ellipsometry. Results from PDS technique are found to be agreeing with those from other experiments. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:425 / 434
页数:10
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