Biaxially oriented conductive La0.5Sr0.5CoO3 thin films on SiO2/Si

被引:7
作者
Jia, QX [1 ]
Arendt, PN [1 ]
Kwon, C [1 ]
Roper, JM [1 ]
Fan, Y [1 ]
Groves, JR [1 ]
Foltyn, SR [1 ]
机构
[1] Univ Calif Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 03期
关键词
D O I
10.1116/1.581155
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have grown biaxially textured La0.5Sr0.5CoO3 (LSCO) thin films on technically important SiO2/Si substrates by pulsed laser deposition, where a biaxially oriented yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted deposition (IBAD) is used as a seed layer to enhance the texture of LSCO on SiO2/Si. The degree of in-plane texturing of LSCO is directly related to the quality of IBAD-YSZ. The smaller the value of full width at half maximum of the IBAD-YSZ (220) diffraction peak, the higher the crystallinity of the LSCO film. The biaxially oriented LSCO film deposited at 700 degrees C on SiO2/Si shows metallic resistivity versus temperature characteristics and has a room-temperature resistivity of around 110 mu Ohm cm. (C) 1998 American Vacuum Society.
引用
收藏
页码:1380 / 1383
页数:4
相关论文
共 11 条
[1]  
ARENDT P, 1994, MATER RES SOC SYMP P, V341, P209, DOI 10.1557/PROC-341-209
[2]   STRUCTURAL AND ELECTRICAL-PROPERTIES OF LA0.5SR0.5COO3 EPITAXIAL-FILMS [J].
CHEUNG, JT ;
MORGAN, PED ;
LOWNDES, DH ;
ZHENG, XY ;
BREEN, J .
APPLIED PHYSICS LETTERS, 1993, 62 (17) :2045-2047
[3]   POLYCRYSTALLINE LA0.5SR0.5COO3 PBZR0.53TI0.47O3 LA0.5SR0.5COO3 FERROELECTRIC CAPACITORS ON PLATINIZED SILICON WITH NO POLARIZATION FATIGUE [J].
DAT, R ;
LICHTENWALNER, DJ ;
AUCIELLO, O ;
KINGON, AI .
APPLIED PHYSICS LETTERS, 1994, 64 (20) :2673-2675
[4]   MICROSTRUCTURE OF EPITAXIAL LA0.5SR0.5COO3/FERROELECTRIC PB0.9LA0.1(ZR0.2TI0.8)0.975O3/LA0.5SR0.5COO3 HETEROSTRUCTURES ON LAALO3 [J].
GHONGE, SG ;
GOO, E ;
RAMESH, R ;
SANDS, T ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1993, 63 (12) :1628-1630
[5]  
JIA QX, UNPUB
[6]   LEAKAGE CURRENT BEHAVIORS OF EPITAXIAL AND PREFERENTIALLY ORIENTED BI4TI3O12 THIN-FILMS GROWN ON LA0.5SR0.5COO3 BOTTOM ELECTRODES [J].
JO, W ;
KIM, KH ;
NOH, TW .
APPLIED PHYSICS LETTERS, 1995, 66 (23) :3120-3122
[7]   Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes [J].
Madhukar, S ;
Aggarwal, S ;
Dhote, AM ;
Ramesh, R ;
Krishnan, A ;
Keeble, D ;
Poindexter, E .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3543-3547
[8]   A LOCALIZED-ELECTRON TO COLLECTIVE-ELECTRON TRANSITION IN SYSTEM (LA SR)CO03 [J].
RACCAH, PM ;
GOODENOU.JB .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (2P2) :1209-&
[9]   ORIENTED FERROELECTRIC LA-SR-CO-O/PB-LA-ZR-TI-O/LA-SR-CO-O HETEROSTRUCTURES ON [001] PT/SIO2 SI SUBSTRATES USING A BISMUTH TITANATE TEMPLATE LAYER [J].
RAMESH, R ;
LEE, J ;
SANDS, T ;
KERAMIDAS, VG ;
AUCIELLO, O .
APPLIED PHYSICS LETTERS, 1994, 64 (19) :2511-2513
[10]   FERROELECTRIC LA-SR-CO-O/PB-ZR-TI-O/LA-SR-CO-O HETEROSTRUCTURES ON SILICON VIA TEMPLATE GROWTH [J].
RAMESH, R ;
GILCHRIST, H ;
SANDS, T ;
KERAMIDAS, VG ;
HAAKENAASEN, R ;
FORK, DK .
APPLIED PHYSICS LETTERS, 1993, 63 (26) :3592-3594