The authors consider the suitability of carbon nanotubes for use in analog rf amplifiers, where the linearity of the device is critical. They show that in the limit of large electrostatic gate-channel capacitance, their theory predicts that an Ohmically contacted, ballistic carbon-nanotube-based field-effect transistor is inherently linear. While they have not achieved this limit in their experimental work, they compare the theory to experiment in the limit of small electrostatic gate-channel capacitance and find excellent agreement at virtually all bias conditions. (c) 2007 American Institute of Physics.
机构:
Univ Calif Irvine, Henry Samueli Sch Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USAUniv Calif Irvine, Henry Samueli Sch Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USA
机构:
Univ Calif Irvine, Henry Samueli Sch Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USAUniv Calif Irvine, Henry Samueli Sch Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USA