Inherent linearity in carbon nanotube field-effect transistors

被引：65

作者：

Baumgardner, James E. ^{[1
]}

Pesetski, Aaron A. ^{[1
]}

Murduck, James M. ^{[1
]}

Przybysz, John X. ^{[1
]}

Adam, John D. ^{[1
]}

Zhang, Hong ^{[1
]}

机构：

[1] Northrop Grumman Corp, Adv Mat & Semicond Device Technol Ctr, Linthicum, MD 21090 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.2760159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors consider the suitability of carbon nanotubes for use in analog rf amplifiers, where the linearity of the device is critical. They show that in the limit of large electrostatic gate-channel capacitance, their theory predicts that an Ohmically contacted, ballistic carbon-nanotube-based field-effect transistor is inherently linear. While they have not achieved this limit in their experimental work, they compare the theory to experiment in the limit of small electrostatic gate-channel capacitance and find excellent agreement at virtually all bias conditions. (c) 2007 American Institute of Physics.

引用

页数：3

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