Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

In this letter, we investigate the dependence of electron inversion layer mobility on high-channel doping required for sub-50-nm MOSFETs in strained silicon (Si), and we compare it to co-processed unstrained Si. For high vertical effective electric field E-eff, the electron mobility in strained Si displays universal behavior and shows enhancement of 1.5-1.7X compared to unstrained Si. For low E-eff, the mobility for strained Si devices decreases toward the unstrained Si data due to Coulomb scattering by channel dopants.