CHARGE ACCUMULATION AND MOBILITY IN THIN DIELECTRIC MOS-TRANSISTORS

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[2] JOHNSON NM, 1978, INT TOPICAL C PHYSIC

[3] STATISTICAL CONSIDERATIONS IN MOSFET CALCULATIONS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 423 - &

[4] INVESTIGATION OF MOST CHANNEL CONDUCTANCE IN WEAK INVERSION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 801 - 810

[5] SABNIS AG, 1979, INT ELECTRON DEVICES

[6] SODINI CG, 1980, DEVICE RES C ITHACA

[7] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[8] CONCERNING ONSET OF HEAVY INVERSION IN MIS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (10) : 649 - 650

[9] FIELD-DEPENDENT MOBILITY MODEL FOR 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1068 - 1074

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[2] JOHNSON NM, 1978, INT TOPICAL C PHYSIC

[3] STATISTICAL CONSIDERATIONS IN MOSFET CALCULATIONS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 423 - &

[4] INVESTIGATION OF MOST CHANNEL CONDUCTANCE IN WEAK INVERSION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 801 - 810

[5] SABNIS AG, 1979, INT ELECTRON DEVICES

[6] SODINI CG, 1980, DEVICE RES C ITHACA

[7] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[8] CONCERNING ONSET OF HEAVY INVERSION IN MIS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (10) : 649 - 650

[9] FIELD-DEPENDENT MOBILITY MODEL FOR 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1068 - 1074