Nucleation, growth and characterization of nanocrystalline diamond films

被引：46

作者：

Cicala, G

Bruno, P

Bénédic, F

Silva, F

Hassouni, K

Senesi, GS

机构：

[1] CNR, Sez Bari, IMIP, I-70126 Bari, Italy

[2] Univ Bari, Dept Chem, I-70126 Bari, Italy

[3] Univ Paris 13, CNRS, UPR 1311, LIMHP, F-93430 Villetaneuse, France

来源：

关键词：

nanocrystalline; diamond film; nucleation; plasma CVD;

D O I：

10.1016/j.diamond.2004.12.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of nanocrystalline diamond films has been obtained by microwave plasmas fed with CH4/Ar/H-2 mixtures. This study seeks to provide an insight on the effects of diamond powder size used for ultrasonical abrasion of silicon substrates, varied from 0.125 to 45 mu m, on nucleation density, growth rate and quality of the films. It has been found that large diamond powder size strongly enhances the nucleation density and reduces the surface roughness of thin and thick films. The effect of diamond powder size is negligible on the growth rate and the bulk properties of the films such as structure, crystallinity and phase composition. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：421 / 425

页数：5

共 18 条

[1] In situ optical characterization during MPACVD diamond film growth on silicon substrates using a bichromatic infrared pyrometer under oblique incidence [J].