Growth by OMVPE and X-ray analysis of ZnTe and ZnTe/ZnSe epilayers on III-V substrates

被引：6

作者：

Tomasini, P ^{[1
]}

Haidoux, A ^{[1
]}

Maurin, M ^{[1
]}

Tedenac, JC ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,URA CNRS 407,LAB PHYSICOCHIM & MAT SOLIDES,F-34095 MONTPELLIER 5,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)00133-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

II-VI compounds are promising materials for optoelectronic applications. They are characterized by a large bandgap in the visible region, which allows the production of lasers and light emitting diodes in the blue region as the zinc telluride gap at room temperature is 2.26 eV. We studied the epitaxial growth of zinc telluride and zinc selenide epilayers on gallium arsenide, indium phosphide and gallium arsenide substrates by atmospheric pressure organo-metallic vapor phase epitaxy. We focused especially on the X-ray analysis of thin layer deformations. The relaxation of the deformation in ZnTe epilayers on InP substrates and ZnSe buffer is abrupt, We observed serious deformation of the thin layers on a GaSb substrate.

引用

页码：590 / 596

页数：7

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