On the origin of 1/f noise in polysilicon emitter bipolar transistors

被引：49

作者：

Deen, MJ ^{[1
]}

Rumyantsev, SL

Schroter, M

机构：

[1] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada

[2] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[3] Rockwell Semicond Syst, Newport Beach, CA 92660 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 02期

关键词：

D O I：

10.1063/1.369256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low frequency noise in polysilicon emitter bipolar transistors (BJT) with different emitter areas (A(E)) was studied. In BJTs with submicron emitter area, random telegraph signals of different amplitudes and frequencies were found. Averaging of noise spectra from different submicron BJTs gives 1/f noise of the same level (normalized to the emitter area! as 1/f noise found in transistors with large emitter areas. The sheet density of traps (N-T) located within the polysilicon-crystalline silicon interfacial layer and responsible for 1/f noise was estimated to be greater than or equal to 3 x 10(8) cm(-2). (C) 1999 American Institute of Physics. [S0021-8979(99)04202-4].

引用

页码：1192 / 1195

页数：4

共 17 条

[1] Effects of emitter dimensions on low-frequency noise in double-polysilicon BJTs [J].

Chen, XY ;

Deen, MJ ;

Yan, ZX ;

Schroter, M .

ELECTRONICS LETTERS, 1998, 34 (02) :219-220

[2] LOW-FREQUENCY NOISE IN POLYSILICON-EMITTER BIPOLAR JUNCTION TRANSISTORS [J].

DEEN, MJ ;

ILOWSKI, J ;

YANG, P .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) :6278-6288

[3]

Deen MJ, 1998, J APPL PHYS, V84, P625, DOI 10.1063/1.368066

[4]

DOAN M, 1994, P S DEGR EL DEV DUE, V941, P235

[5] NOISE IN SOLID-STATE MICROSTRUCTURES - A NEW PERSPECTIVE ON INDIVIDUAL DEFECTS, INTERFACE STATES AND LOW-FREQUENCY (1/F) NOISE [J].

KIRTON, MJ ;

UREN, MJ .

ADVANCES IN PHYSICS, 1989, 38 (04) :367-468

[6] LOCATION OF LOW-FREQUENCY NOISE SOURCES IN SUBMICROMETER BIPOLAR-TRANSISTORS [J].

KLEINPENNING, TGM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) :1501-1506

[7] STRONG LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS WITH INTERFACIAL OXIDE DUE TO FLUCTUATIONS IN TUNNELING PROBABILITIES [J].

LAU, WS ;

CHOR, EF ;

FOO, CS ;

KHOONG, WC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (8A) :L1021-L1023

[8] On noise sources in hot electron-degraded bipolar junction transistors [J].

Llinares, P ;

Ghibaudo, G ;

Chroboczek, JA .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2676-2679

[9] Random telegraph noise in advanced self-aligned bipolar transistors [J].

Lu, JQ ;

Koch, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :826-832

[10] LOW-FREQUENCY NOISE IN SELF-ALIGNED BIPOLAR-TRANSISTORS [J].

LU, PF .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1335-1339

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