STRONG LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS WITH INTERFACIAL OXIDE DUE TO FLUCTUATIONS IN TUNNELING PROBABILITIES

被引：21

作者：

LAU, WS

CHOR, EF

FOO, CS

KHOONG, WC

机构：

[1] Department of Electrical Engineering, National University of Singapore, 0511

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 8A期

关键词：

BIPOLAR TRANSISTORS; POLYSILICON EMITTER; NOISE; EQUIVALENT CIRCUIT; INTERFACIAL OXIDE; TUNNELING;

D O I：

10.1143/JJAP.31.L1021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong 1/f(alpha)(2 > alpha > 1)noise was observed in polysilicon emitter bipolar transistors with an interfacial oxide layer sandwiched between the polysilicon and monocrystalline silicon emitter regions but not in similar transistors without interfacial oxide. The noise was explained as fluctuations in the carrier tunneling probabilities through the interfacial oxide. A simple equivalent circuit was proposed to model the strong 1/f(alpha) noise.

引用

页码：L1021 / L1023

页数：3

共 12 条

[1] COMPARISON OF EXPERIMENTAL AND THEORETICAL RESULTS ON POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J].