LOW-FREQUENCY NOISE IN CR-SIO2-N-SI TUNNEL-DIODES

被引：19

作者：

KUMAR, V ^{[1
]}

DAHLKE, WE ^{[1
]}

机构：

[1] LEHIGH UNIV, DEPT ELECT ENGN, BETHLEHEM, PA 18015 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1109/T-ED.1977.18694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：146 / 153

页数：8

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[9] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].

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[10]

KUMAR V, TO BE PUBLISHED

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