INCREASE OF LOW-FREQUENCY-NOISE-GENERATING DEFECTS IN TODAYS CMOS AND BICMOS TECHNOLOGIES

被引：4

作者：

MURRAY, DC

SIABISHAHRIVAR, N

EVANS, AGR

REDMANWHITE, W

CARTER, JC

ALTRIP, JL

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90272-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：367 / 372

页数：6

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