COMPARISON OF EXPERIMENTAL AND THEORETICAL RESULTS ON POLYSILICON EMITTER BIPOLAR-TRANSISTORS

[1] ARMIGLIATO A, 1979, 9TH P ESSDERC

[2] ARSENIC PROFILES IN BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 475 - 476

[3] EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED EMITTERS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (01) : 95 - 104

[4] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[5] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776

[6] DUFFILL JE, 1982, 12TH P ESSDERC

[7] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[8] THE ROLE OF THE INTERFACIAL LAYER IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1862 - 1869

[9] ELTOUKHY AA, 1982, IEEE T ELECTRON DEV, V29, P961, DOI 10.1109/T-ED.1982.20814

[10] ELTOUKHY AA, COMMUNICATION

[1] ARMIGLIATO A, 1979, 9TH P ESSDERC

[2] ARSENIC PROFILES IN BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 475 - 476

[3] EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED EMITTERS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (01) : 95 - 104

[4] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[5] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776

[6] DUFFILL JE, 1982, 12TH P ESSDERC

[7] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[8] THE ROLE OF THE INTERFACIAL LAYER IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1862 - 1869

[9] ELTOUKHY AA, 1982, IEEE T ELECTRON DEV, V29, P961, DOI 10.1109/T-ED.1982.20814

[10] ELTOUKHY AA, COMMUNICATION