COMPARISON OF EXPERIMENTAL AND THEORETICAL RESULTS ON POLYSILICON EMITTER BIPOLAR-TRANSISTORS

[11] PREDEPOSITION THROUGH A POLYSILICON LAYER AS A TOOL TO REDUCE ANOMALIES IN PHOSPHORUS PROFILES AND THE PUSH-OUT EFFECT IN N-P-N TRANSISTORS [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (01): : 37 - 41

[12] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[13] Fossum J. G., 1980, International Electron Devices Meeting. Technical Digest, P280

[14] HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 491 - 495

[15] GUMMEL HK, 1961, P IRE, V49, P839

[16] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +

[17] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +

[18] BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1014 - 1018

[19] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1163 - 1171

[20] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1171 - 1176

[11] PREDEPOSITION THROUGH A POLYSILICON LAYER AS A TOOL TO REDUCE ANOMALIES IN PHOSPHORUS PROFILES AND THE PUSH-OUT EFFECT IN N-P-N TRANSISTORS [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (01): : 37 - 41

[12] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[13] Fossum J. G., 1980, International Electron Devices Meeting. Technical Digest, P280

[14] HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 491 - 495

[15] GUMMEL HK, 1961, P IRE, V49, P839

[16] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +

[17] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +

[18] BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1014 - 1018

[19] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1163 - 1171

[20] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1171 - 1176