A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT

被引：59

作者：

MANDURAH, MM ^{[1
]}

SARASWAT, KC ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期

关键词：

D O I：

10.1109/T-ED.1981.20505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1171 / 1176

页数：6

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[9] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY [J].

MANDURAH, MM ;

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[10] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].

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