A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY

被引：161

作者：

MANDURAH, MM ^{[1
]}

SARASWAT, KC ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期

关键词：

D O I：

10.1109/T-ED.1981.20504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1163 / 1171

页数：9

相关论文

共 21 条

[1] IV CHARACTERISTICS OF POLYCRYSTALLINE SILICON RESISTORS
BACCARANI, G
IMPRONTA, M
RICCO, B
FERLA, P
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 777 - 782
[2] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
BACCARANI, G
RICCO, B
SPADINI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570
[3] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON.
Cowher, M.E.
Sedgwick, T.O.
[J]. 1600, (119):
[4] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS
FONASH, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289
[5] RESISTIVITY OF DOPED POLYCRYSTALLINE SILICON FILMS
FRIPP, AL
SLACK, LH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 145 - 146
[6] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &
[7] SUBSTITUTIONAL DOPING IN AMORPHOUS-SEMICONDUCTORS AS-SI SYSTEM
KNIGHTS, JC
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 663 - 667
[8] KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1
[9] LU NCC, 1980, IEEE ELECTR DEVICE L, V1, P36
[10] ARSENIC SEGREGATION IN POLYCRYSTALLINE SILICON
MANDURAH, MM
SARASWAT, KC
KAMINS, TI
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 683 - 685