PREDEPOSITION THROUGH A POLYSILICON LAYER AS A TOOL TO REDUCE ANOMALIES IN PHOSPHORUS PROFILES AND THE PUSH-OUT EFFECT IN N-P-N TRANSISTORS

被引：11

作者：

FINETTI, M ^{[1
]}

MASETTI, G ^{[1
]}

NEGRINI, P ^{[1
]}

SOLMI, S ^{[1
]}

机构：

[1] UNIV ANCONA,FAC ENGN,DEPT ELECTR,I-60100 ANCONA,ITALY

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 01期

关键词：

D O I：

10.1049/ip-i-1.1980.0007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：37 / 41

页数：5

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