Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

被引：27

作者：

Jones, AM ^{[1
]}

Jewell, JL

Mabon, JC

Reuter, EE

Bishop, SG

Roh, SD

Coleman, JJ

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

[3] Picolight Inc, Boulder, CO 80301 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.123435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Long-wavelength photoluminescence at 1.35 mu m has been measured from an InGaAs quantum-well heterostructure deposited on disk-shaped InGaAs (x(In) = 0.05) compliant-film membranes. Strain-induced warping is avoided by utilizing a single pedestal to suspend each compliant-film disk over a GaAs substrate. Cathodoluminescence (CL) spectra verify the long-wavelength emission, and panchromatic CL images reveal that strong emission occurs only on compliant film structures supported by 1-mu m-diam pedestals. (C) 1999 American Institute of Physics. [S0003-6951(99)03007-7].

引用

页码：1000 / 1002

页数：3

共 13 条

[11] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].