Optical and electrical properties of Al-rich AlGaN alloys

被引：102

作者：

Li, J ^{[1
]}

Nam, KB ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 20期

关键词：

D O I：

10.1063/1.1418255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxGa1-xN alloys with x up to 0.7 were grown by metalorganic chemical vapor deposition and their optical properties were investigated by deep UV time-resolved photoluminescence (PL) spectroscopy. Our results revealed that both the activation energy of the PL emission intensity and the PL decay lifetime exhibit sharp increases at x of around 0.4. The results can be understood in terms of the sharp increase of the impurity binding energy or the carrier/exciton localization energy around x=0.4. A three orders of magnitude increase in resistivity of undoped AlGaN alloys at x of around 0.4 was also observed, which further corroborated the optical results. (C) 2001 American Institute of Physics.

引用

页码：3245 / 3247

页数：3

共 10 条

[1]

BREMSER MD, 1999, GALLIUM NITRIDE RELA, P147

[2] NEUTRAL-DONOR-BOUND EXCITON RECOMBINATION DYNAMICS IN GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].