EDGE EMISSION OF ALXGA1-XN

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355

[2] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X [J]. PHYSICAL REVIEW B, 1982, 25 (06) : 3828 - 3840

[3] GARBUZOV DZ, 1975, SOV PHYS SEMICOND+, V8, P998

[4] DISORDER EFFECTS ON FREE-EXCITONS IN CDS1-XSEX MIXED-CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (02): : 671 - 681

[5] PROPERTIES AND ION-IMPLANTATION OF ALXGA1-XN EPITAXIAL SINGLE-CRYSTAL FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 492 - 494

[6] EFFECT OF SI ON PHOTOLUMINESCENCE OF GAN [J]. SOLID STATE COMMUNICATIONS, 1986, 57 (06) : 405 - 409

[7] KOIDE Y, UNPUB

[8] EVIDENCE FOR EXCITON LOCALIZATION BY ALLOY FLUCTUATIONS IN INDIRECT-GAP GAAS1-XPX [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (16) : 1087 - 1090

[9] LUMINESCENCE AND DIRECT EXPERIMENTAL-OBSERVATIONS OF BAND-STRUCTURE EFFECTS IN NITROGEN-DOPED GAXIN1-XP ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1200 - 1205

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355

[2] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X [J]. PHYSICAL REVIEW B, 1982, 25 (06) : 3828 - 3840

[3] GARBUZOV DZ, 1975, SOV PHYS SEMICOND+, V8, P998

[4] DISORDER EFFECTS ON FREE-EXCITONS IN CDS1-XSEX MIXED-CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (02): : 671 - 681

[5] PROPERTIES AND ION-IMPLANTATION OF ALXGA1-XN EPITAXIAL SINGLE-CRYSTAL FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 492 - 494

[6] EFFECT OF SI ON PHOTOLUMINESCENCE OF GAN [J]. SOLID STATE COMMUNICATIONS, 1986, 57 (06) : 405 - 409

[7] KOIDE Y, UNPUB

[8] EVIDENCE FOR EXCITON LOCALIZATION BY ALLOY FLUCTUATIONS IN INDIRECT-GAP GAAS1-XPX [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (16) : 1087 - 1090

[9] LUMINESCENCE AND DIRECT EXPERIMENTAL-OBSERVATIONS OF BAND-STRUCTURE EFFECTS IN NITROGEN-DOPED GAXIN1-XP ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1200 - 1205

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &