(Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thin films grown on LaNiO3-buffered and Pt-buffered silicon substrates by sol-gel processing -: art. no. 024102

被引：26

作者：

Li, X ^{[1
]}

Zhai, JW ^{[1
]}

Chen, HD ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 02期

关键词：

D O I：

10.1063/1.1834730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antiferroelectric (Pb,La)(Zr,Sn,Ti)O-3 thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel processing technique. The films grown on LaNiO3-buffered silicon substrates showed a dense columnar microstructure and were highly (100)-oriented while those grown on Pt-buffered silicon substrates showed an equiaxed microstructure without any obvious preferred orientation. The relationship between the orientation of films and the saturation polarization was studied. The phase switching field and the dielectric constant were investigated as a function of film thickness. (C) 2005 American Institute of Physics.

引用

页数：7

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