Laser assisted focused-ion-beam-induced deposition of copper

Focused-ion-beam-induced deposition of a low resistivity Cu film has been produced using local heating of the substrate with a semiconductor laser. A spot of order 70 mu m diameter is irradiated using suitable optics to couple the 1.3 W, 977 nm laser radiation to the sample. The resistivity of the deposited Cu drops from 150-200 mu Ohm cm with no laser power to 3 mu Ohm cm at 1.2 W, when the temperature in the irradiated areas is 120 degrees C. The metal film deposits only where the ion beam is incident. (C) 1996 American Vacuum Society.