FOCUSED ION-BEAM INDUCED DEPOSITION OF LOW-RESISTIVITY GOLD-FILMS

被引：51

作者：

BLAUNER, PG ^{[1
]}

BUTT, Y ^{[1
]}

RO, JS ^{[1
]}

THOMPSON, CV ^{[1
]}

MELNGAILIS, J ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1816 / 1818

页数：3

共 17 条

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :609-617

[3]

BLAUNER PG, IN PRESS MATER RES S

[4]

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[5]

ECONOMOU N, 1987, P SPIE, V737, P201

[6]

EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[7]

Gamo K., 1986, Microelectronic Engineering, V5, P163, DOI 10.1016/0167-9317(86)90043-2

[8] FOCUSED ION-BEAM INDUCED DEPOSITION OF OPAQUE CARBON-FILMS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :1035-1038

[9]

KOOPS HWP, 1988, J VAC SCI TECHNOL B, V6

[10] SELECTIVE AREA NUCLEATION FOR METAL CHEMICAL VAPOR-DEPOSITION USING FOCUSED ION-BEAMS [J].

KUBENA, RL ;

STRATTON, FP ;

MAYER, TM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1865-1868

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