Stability of zirconium silicate films on Si under vacuum and O2 annealing

被引:38
作者
Morais, J
da Rosa, EBO
Miotti, L
Pezzi, RP
Baumvol, IJR
Rotondaro, ALP
Bevan, MJ
Colombo, L
机构
[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil
[2] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75241 USA
关键词
D O I
10.1063/1.1367288
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of postdeposition annealing in vacuum and in dry O-2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow nuclear resonance profiling, and low energy ion scattering spectroscopy were used to obtain depth distributions of Si, O, and Zr in the films. The chemical environment of these elements in near-surface and near-interface regions was identified by angle-resolved x-ray photoelectron spectroscopy. It is shown that although the interface region is rather stable, the surface region presents an accumulation of Si after thermal annealing. (C) 2001 American Institute of Physics.
引用
收藏
页码:2446 / 2448
页数:3
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