Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN

被引：17

作者：

Lim, SH ^{[1
]}

Swider, W ^{[1
]}

Washburn, J ^{[1
]}

Liliental-Weber, Z ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.1323517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Detailed structure of the interfacial layers of Ti/Ta/Al ohmic contacts to n-type AlGaN/GaN/ sapphire are investigated by means of transmission electron microscopy. High-resolution electron microscopy (HREM), optical diffractograms, and computer simulations confirmed that TiN (similar to 10.0 nm) and Ti3AlN (similar to1.4 nm) interfacial layers form at the interface between the Ti layer and the Al0.35Ga0.65N substrate by a solid state reaction during annealing for 3 min in N-2 at 950 degreesC. The orientation relationship between Ti3AlN and Al0.35Ga0.65N was found to be: [011](Ti3AlN)parallel to [2 (1) over bar(1) over bar0](Al0.35Ga0.65N) and (1 (1) over bar1)(Ti3AlN)parallel to (0 (0) over bar 01)(Al0.35Ga0.65N). The cubic Ti3AlN interfacial layer, has a lattice parameter of 0.411+/-0.003 nm with the space group Pm3m matching that of Al0.35Ga0.65N A model of the atomic configurations of the Ti3AlN/Al0.35Ga0.65N interface is proposed. This model is supported by a good match between the simulated and the experimental HREM image of the Ti3AlN/Al0.35Ga0.65N interface. The formation of TiN and Ti3AlN interfacial layers appears to be responsible for the onset of the ohmic contact behavior in Ti/Ta/Al contacts. (C) 2000 American Institute of Physics. [S0021-8979(00)04924-0].

引用

页码：6364 / 6368

页数：5

共 13 条

[1]

[Anonymous], 1998, HIGH RESOLUTION ELEC

[2] Very low resistance multilayer ohmic contact to n-GaN [J].

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1672-1674

[3]

Guo JD, 1996, APPL PHYS LETT, V68, P235, DOI 10.1063/1.116471

[4]

KHAN MA, 1993, APPL PHYS LETT, V63, P1214, DOI 10.1063/1.109775

[5]

Kilaas R., 1987, P 45 ANN M EL MICR S, P66

[6] LOW-RESISTANCE OHMIC CONTACTS ON WIDE BAND-GAP GAN [J].

LIN, ME ;

MA, Z ;

HUANG, FY ;

FAN, ZF ;

ALLEN, LH ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1994, 64 (08) :1003-1005

[7] Study of contact formation in AlGaN/GaN heterostructures [J].

Liu, QZ ;

Yu, LS ;

Deng, F ;

Lau, SS ;

Chen, Q ;

Yang, JW ;

Khan, MA .

APPLIED PHYSICS LETTERS, 1997, 71 (12) :1658-1660

[8] Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN [J].

Luther, BP ;

Mohney, SE ;

Jackson, TN ;

Khan, MA ;

Chen, Q ;

Yang, JW .

APPLIED PHYSICS LETTERS, 1997, 70 (01) :57-59

[9] EMERGING GALLIUM NITRIDE BASED DEVICES [J].

MOHAMMAD, SN ;

SALVADOR, AA ;

MORKOC, H .

PROCEEDINGS OF THE IEEE, 1995, 83 (10) :1306-1355

[10] HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001

← 1 2 →