Single-band model for diluted magnetic semiconductors: Dynamical and transport properties and relevance of clustered states

被引:42
作者
Alvarez, G [1 ]
Dagotto, E
机构
[1] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[2] Florida State Univ, Dept Phys, Tallahassee, FL 32310 USA
来源
PHYSICAL REVIEW B | 2003年 / 68卷 / 04期
关键词
D O I
10.1103/PhysRevB.68.045202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS's) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work [G. Alvarez et al., Phys. Rev. Lett. 89, 277202 (2002)] where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature T-C. This conclusion is based on the calculation of the resistivity vs temperature, that shows a soft metal-to-insulator transition near TC, as well on the analysis of the density-of-states and optical conductivity. In addition, in the clustered regime a large magnetoresistance is observed in simulations. Formal analogies between DMS's and manganites are also discussed.
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页数:13
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