The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers

被引：40

作者：

Campion, RP ^{[1
]}

Edmonds, KW ^{[1
]}

Zhao, LX ^{[1
]}

Wang, KY ^{[1
]}

Foxon, CT ^{[1
]}

Gallagher, BL ^{[1
]}

Staddon, CR ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

spintronics; GaMnAs; semiconducting materials;

D O I：

10.1016/S0022-0248(02)02291-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate that GaMnAs films grown with As-2 have excellent structural, electrical and magnetic properties comparable or better than similar films grown with As-4. Using As-2, a Curie temperature on post-growth annealed samples of 140K has been achieved. Also films showing metallic conduction have been obtained over a much wider range of Mn concentrations from 1.5% to 8% than has previously been reported for films grown with As-4. The improved properties of the films grown with As-2 May be related to the lower concentration of antisite defects at the low growth temperatures employed. (C) 2002 Published by Elsevier Science B.V.

引用

页码：311 / 316

页数：6

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