High-quality GaMnAs films grown with arsenic dimers

被引：88

作者：

Campion, RP ^{[1
]}

Edmonds, KW ^{[1
]}

Zhao, LX ^{[1
]}

Wang, KY ^{[1
]}

Foxon, CT ^{[1
]}

Gallagher, BL ^{[1
]}

Staddon, CR ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 247卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

GaMnAs; semiconducting materials; spintronic devices;

D O I：

10.1016/S0022-0248(02)01939-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate that GaMnAs films grown with As-2 have excellent structural, electrical and magnetic properties comparable or better than similar films grown with AS(4). Using As-4 a Curie temperature of 112 K hits been achieved, which is slightly higher than the best reported to date. However, more significantly films showing metallic conduction have been obtained over a much wider range of Mn concentrations from 1.5% to 8% than hits previously been reported for films grown with AS(4). The improved properties of the films grown with As, are related to the lower concentration of antisite defects at the low growth temperatures employed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：42 / 48

页数：7

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