Hall effect and hole densities in Ga1-xMnxAs

被引：121

作者：

Edmonds, KW ^{[1
]}

Wang, KY ^{[1
]}

Campion, RP ^{[1
]}

Neumann, AC ^{[1
]}

Foxon, CT ^{[1
]}

Gallagher, BL ^{[1
]}

Main, PC ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期

关键词：

D O I：

10.1063/1.1512822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature T-C are obtained over the range 0.015less than or equal toxless than or equal to0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0x10(27) m(-3) when T-C=125 K. These data allow the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates T-C at large x and underestimates T-C at low x. (C) 2002 American Institute of Physics.

引用

页码：3010 / 3012

页数：3

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