Bias-stress-induced evolution of the dielectric properties of porous-ULK/copper advanced interconnects

被引:6
作者
Guedj, C
Portier, X
Mondon, F
Arnal, V
Guillaumond, JF
Arnaud, L
Barnes, JP
Jousseaume, V
Roule, A
Maitrejean, S
Chapelon, LL
Reimbold, G
Torres, J
Passemard, G
机构
[1] CEA DRT, LETI DTS, CEA GRE, F-38054 Grenoble, France
[2] SIFCOM, ISMRA, F-14050 Caen, France
[3] STMicroelect, F-38926 Crolles, France
关键词
porous; ULK; transport; conduction; Poole-Frenkel; reliability; SiCOH; dielectric; defect;
D O I
10.1016/j.mee.2005.04.089
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dielectric properties of porous ULK/Cu interconnects designed for sub 65 nm nodes are degraded at high bias-stress. The resulting increase of dielectric constant and defect density can be estimated from the Poole-Frenkel modeling of the leakage currents above 1 MV/cm. More generally, the porous SiCOH dielectric materials showing this transport mechanism appear to be inherently less reliable when their initial k value is the lowest. This trend is obviously a major issue for further downscaling developments of porous ULK/Cu interconnects.
引用
收藏
页码:345 / 348
页数:4
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