Measurement of trapping time constants in irradiated DOFZ silicon with test beam data

被引：11

作者：

Lari, T ^{[1
]}

机构：

[1] Sez Milano, Ist Nazl Fis Nucl, I-20133 Milan, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 518卷 / 1-2期

关键词：

D O I：

10.1016/j.nima.2003.11.019

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS Pixel detectors irradiated with protons to a fluence of 1.1 x 10(15) n(eq) cm(-2). Different defect annealing scenarios have been investigated. The trapping probability has been observed to be smaller after 25 h of annealing at 60degreesC than after beneficial annealing only. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：349 / 351

页数：3

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