Step-step interactions on the vicinal Si(111)√3x√3-Ga surface

被引：10

作者：

Fujita, K ^{[1
]}

Kusumi, Y ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Ibaraki, Osaka 3050046, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.58.1126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Steps on a Si(111)root 3 x root 3-Ga surface that was inclined toward the [(1) over bar (1) over bar 2] direction were observed at 550 degrees C with a scanning tunneling microscope. The step stiffness and step-step repulsion coefficient of single-bilayer steps were estimated to be 3 x 10(-11) J m(-1) (similar to 20 meV Angstrom(-1)) and 2 x 10(-29) J m (similar to 1.3 eV Angstrom). It was clarified that the elastic repulsion is dominant in step-step interactions on the surface. The formation energy of double-bilayer steps at 550 degrees C was estimated to be of the order of 1 x 10(-13) J m(-1) (similar to 0.1 meV Angstrom(-1)). [S0163-1829(98)04927-3].

引用

页码：1126 / 1129

页数：4

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