GEOMETRIC STRUCTURE OF THE SI(111)SQUARE-ROOT-3SQUARE-ROOT-3-GA SURFACE

被引:102
作者
KAWAZU, A
SAKAMA, H
机构
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 05期
关键词
D O I
10.1103/PhysRevB.37.2704
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:2704 / 2706
页数:3
相关论文
共 13 条
[1]   SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975
[2]  
Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421
[3]  
KAWAZU A, 1986, NANOMETER STRUCTURE, P64
[4]  
KAWAZU A, 1980, 4TH P INT C SOL SURF, V2, P1015
[5]  
KAWAZU A, 1986, PHYS REV B, V36, P9809
[6]   SI(111) SQUARE-ROOT 3 X SQUARE-ROOT 3-AL - AN ADATOM-INDUCED RECONSTRUCTION [J].
NORTHRUP, JE .
PHYSICAL REVIEW LETTERS, 1984, 53 (07) :683-686
[7]   ADSORPTION OF BISMUTH ON SI(110) SURFACES [J].
OYAMA, T ;
OHI, S ;
KAWAZU, A ;
TOMINAGA, G .
SURFACE SCIENCE, 1981, 109 (01) :82-94
[8]   STRUCTURAL STUDIES OF SI(111)2X1 SURFACES USING LOW-ENERGY ELECTRON-DIFFRACTION [J].
SAKAMA, H ;
KAWAZU, A ;
UEDA, K .
PHYSICAL REVIEW B, 1986, 34 (02) :1367-1370
[9]   VACANCY-BUCKLING MODEL FOR THE (2X2) GAAS(111) SURFACE [J].
TONG, SY ;
XU, G ;
MEI, WN .
PHYSICAL REVIEW LETTERS, 1984, 52 (19) :1693-1696
[10]  
van Hove M.A., 1979, SURFACE CRYSTALLOGRA