VACANCY-BUCKLING MODEL FOR THE (2X2) GAAS(111) SURFACE

被引:194
作者
TONG, SY [1 ]
XU, G [1 ]
MEI, WN [1 ]
机构
[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201
关键词
D O I
10.1103/PhysRevLett.52.1693
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1693 / 1696
页数:4
相关论文
共 15 条
[2]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR THE RELAXED (110) SURFACE OF GAAS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1979, 20 (10) :4150-4159
[3]   EMPTY SURFACE STATES ON SEMICONDUCTORS - THEIR INTERACTIONS WITH METAL OVERLAYERS AND THEIR RELATION TO SCHOTTKY BARRIERS [J].
GUDAT, W ;
EASTMAN, DE ;
FREEOUF, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :250-252
[4]   SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].
HANEMAN, D .
PHYSICAL REVIEW, 1961, 121 (04) :1093-&
[5]   SURFACE RECONSTRUCTION ON SEMICONDUCTORS [J].
HARRISON, WA .
SURFACE SCIENCE, 1976, 55 (01) :1-19
[6]   EVIDENCE FOR SUBSURFACE ATOMIC DISPLACEMENTS OF GAAS(110) SURFACE FROM LEED/CMTA ANALYSIS [J].
KAHN, A ;
CISNEROS, G ;
BONN, M ;
MARK, P ;
DUKE, CB .
SURFACE SCIENCE, 1978, 71 (02) :387-396
[7]   SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110) [J].
LUBINSKY, AR ;
DUKE, CB ;
LEE, BW ;
MARK, P .
PHYSICAL REVIEW LETTERS, 1976, 36 (17) :1058-1061
[8]  
MACRAE AU, 1964, J APPL PHYS, V35, P1629
[10]   METAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS [J].
ROWE, JE ;
CHRISTMAN, SB ;
MARGARITONDO, G .
PHYSICAL REVIEW LETTERS, 1975, 35 (21) :1471-1475