Thermal and mechanical analysis of photoresist and silylated photoresist films: Application to AZ 5214(TM)

被引:12
作者
Gogolides, E
Tegou, E
Beltsios, K
Papadokostaki, K
Hatzakis, M
机构
[1] Natl. Ctr. Sci. Res. NCSR D., Aghia Paraskevi, Attiki, 15310
关键词
D O I
10.1016/0167-9317(95)00242-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Combined thermal and mechanical analysis of spun-on photoresist, and silylated photoresist films after each lithographic step was done using Differential Scanning Calorimetry (DSC) and Thermomechanical Analysis (TMA). For reacting photoresist systems the DSC method is excellent for determination of both the baking-temperature ranges in which the reactions take place, and the heat of reaction. For calculation of the glass transition temperature (T-g), and mechanical deformation of resists however, TMA proves most appropriate. This methodology was applied for a commercial photoresist AZ 5214(TM) to determine the thermally or melamine induced crosslinking temperature regions, the T-g of crosslinked samples, and to show that wet HMCTS (Hexamethyl-Cyclo-Tri-Silazane) silylated films have higher T-g values than the original photoresist.
引用
收藏
页码:267 / 270
页数:4
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