Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

被引：69

作者：

Lee, BH ^{[1
]}

Young, CD ^{[1
]}

Choi, R ^{[1
]}

Sim, JH ^{[1
]}

Bersuker, G ^{[1
]}

Kang, CY ^{[1
]}

Harris, R ^{[1
]}

Brown, GA ^{[1
]}

Matthews, K ^{[1
]}

Song, SC ^{[1
]}

Moumen, N ^{[1
]}

Barnett, J ^{[1
]}

Lysaght, P ^{[1
]}

Choi, KS ^{[1
]}

Wen, HC ^{[1
]}

Huffman, C ^{[1
]}

Alshareef, H ^{[1
]}

Majhi, P ^{[1
]}

Gopalan, S ^{[1
]}

Peterson, J ^{[1
]}

Kirsh, P ^{[1
]}

Li, HJ ^{[1
]}

Gutt, J ^{[1
]}

Gardner, M ^{[1
]}

Huff, HF ^{[1
]}

Zeitzoff, P ^{[1
]}

Murto, RW ^{[1
]}

Larson, L ^{[1
]}

Ramiller, C ^{[1
]}

机构：

[1] Int SEMATECH, Front End Proc Div, Austin, TX 78741 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as V-th instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed IN measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO2 devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.

引用

页码：859 / 862

页数：4

共 39 条

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