In(As, Sb) superlattice-based emitters for mid-IR wavelengths

被引：2

作者：

Phillips, CC ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Solid State Grp, Dept Phys, London SW7 2BZ, England

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 1997年 / 144卷 / 05期

关键词：

superlattices; infrared radiators; lasers;

D O I：

10.1049/ip-opt:19971380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical, magneto-optical and time-resolved spectroscopies indicate that arsenic-rich InAs/InAs1-x Sb-x strained-layer superlattices have a pronounced type-II offset, with electrons confined to the alloy layers, encouragingly high radiative efficiencies at wavelengths well into the midinfrared, and exhibit suppression of Auger recombination. LEDs operating at 3-10 mu m now give room temperature powers of 30 mu W and are probably at present limited by inadequate electron confinement.

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页码：262 / 265

页数：4

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