Field emission investigations of RuO2-doped SnO2 wires

被引：23

作者：

Bhise, Ashok B.

Late, Dattatray J.

Ramgir, Niranjan S.

More, Mahendra A.

Mulla, Imtiaz S.

Pillai, Vijayamohanan K.

Joag, Dilip S. ^{[1
]}

机构：

[1] Univ Poona, Dept Phys, Ctr Adv Studies Mat Sci & Condensed Matter Phys, Pune 411007, Maharashtra, India

[2] Natl Chem Lab, Phys & Mat Chem Div, Pune 411008, Maharashtra, India

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 23期

关键词：

field emission; doped semiconductor; field enhancement factor; SnO2; RuO2;

D O I：

10.1016/j.apsusc.2007.05.058

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：9159 / 9163

页数：5

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