Kinetic step bunching instability during surface growth

被引：24

作者：

Frisch, T ^{[1
]}

Verga, A ^{[1
]}

机构：

[1] Univ Aix Marseille 1, CNRS, UMR 6594, Inst Rech Phenomenes Hors Equilibre, Marseille, France

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.94.226102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the step bunching kinetic instability in a growing crystal surface characterized by anisotropic diffusion. The instability is due to the interplay between the elastic interactions and the alternation of step parameters. This instability is predicted to occur on a vicinal semiconductor surface Si(001) or Ge(001) during epitaxial growth. The maximal growth rate of the step bunching increases like F-4, where F is the deposition flux. Our results are complemented with numerical simulations which reveal a coarsening behavior in the long time evolution for the nonlinear step dynamics.

引用

页数：4

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