Scaling properties of step bunches induced by sublimation and related mechanisms

被引:55
作者
Krug, J
Tonchev, V
Stoyanov, S
Pimpinelli, A
机构
[1] Univ Cologne, Inst Theoret Phys, D-50937 Cologne, Germany
[2] Bulgarian Acad Sci, Inst Phys Chem, BU-1113 Sofia, Bulgaria
[3] Univ Clermont Ferrand, CNRS, UMR 6602, LASMEA, F-63177 Clermont Ferrand, France
关键词
D O I
10.1103/PhysRevB.71.045412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This work provides a ground for a quantitative interpretation of experiments on step bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier in the regime of weak desorption. A strong step bunching instability takes place when the kinetic length d(+)=D-s/K+ is larger than the average distance l between the steps on the vicinal surface; here D-s is the surface diffusion coefficient and K+ is the step kinetic coefficient. In the opposite limit d(+)<l the instability is weak and step bunching can occur only when the magnitude of step-step repulsion is small. The central result are power law relations of the form Lsimilar toH(alpha), l(min)similar toH(-gamma) between the width L, the height H, and the minimum interstep distance l(min) of a bunch. These relations are obtained from a continuum evolution equation for the surface profile, which is derived from the discrete step dynamical equations for the case d(+)>l. The analysis of the continuum equation reveals the existence of two types of stationary bunch profiles with different scaling properties. Through comparison with numerical simulations of the discrete step equations, we establish the value gamma=2/(n+1) for the scaling exponent of l(min) in terms of the exponent n of the repulsive step-step interaction, and provide an exact expression for the prefactor in terms of the energetic and kinetic parameters of the system. For the bunch width L we observe significant deviations from the expected scaling with exponent gamma=1-1/alpha, which are attributed to the pronounced asymmetry between the leading and the trailing edges of the bunch, and the fact that bunches move. Through a mathematical equivalence on the level of the discrete step equations as well as on the continuum level, our results carry over to the problems of step bunching induced by growth with a strong inverse ES effect, and by electromigration in the attachment/detachment limited regime. Thus our work provides support for the existence of universality classes of step bunching instabilities [A. Pimpinelli , Phys. Rev. Lett. 88, 206103 (2002)], but some aspects of the universality scenario need to be revised.
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共 53 条
[1]  
[Anonymous], SOLIDS FAR EQUILIBRI
[2]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[3]   Kinetic length, step permeability, and kinetic coefficient asymmetry on the Si(111) (7x7) surface [J].
Chung, WF ;
Altman, MS .
PHYSICAL REVIEW B, 2002, 66 (07) :1-5
[4]  
Dobbs H, 1996, J PHYS I, V6, P413, DOI 10.1051/jp1:1996166
[5]  
FRANK FC, 1962, GROWTH PERFECTION CR, P411
[6]   The effective charge in surface electromigration [J].
Fu, ES ;
Liu, DJ ;
Johnson, MD ;
Weeks, JD ;
Williams, ED .
SURFACE SCIENCE, 1997, 385 (2-3) :259-269
[7]   Size-scaling exponents of current-induced step bunching on silicon surfaces [J].
Fujita, K ;
Ichikawa, M ;
Stoyanov, SS .
PHYSICAL REVIEW B, 1999, 60 (23) :16006-16012
[8]   Stable equidistant step trains during crystallization of insulin [J].
Gliko, O ;
Reviakine, I ;
Vekilov, PG .
PHYSICAL REVIEW LETTERS, 2003, 90 (22) :4
[9]   Step bunching in a diffusion-controlled system: phase-shifting interferometry investigation of ferritin [J].
Gliko, O ;
Booth, NA ;
Vekilov, PG .
ACTA CRYSTALLOGRAPHICA SECTION D-BIOLOGICAL CRYSTALLOGRAPHY, 2002, 58 :1622-1627
[10]   DC-RESISTIVE-HEATING-INDUCED STEP BUNCHING ON VICINAL SI (111) [J].
HOMMA, Y ;
MCCLELLAND, RJ ;
HIBINO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2254-L2256